IXTX102N65X2
IXYS
IXYS
MOSFET N-CH 650V 102A PLUS247-3
$19.80
Available to order
Reference Price (USD)
1+
$13.55000
30+
$11.39600
120+
$10.47200
510+
$8.93200
1,020+
$8.62400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXTX102N65X2 by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXTX102N65X2 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 51A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
Related Products
onsemi
NVMFS5C450NAFT1G
Diodes Incorporated
BSS84Q-13-F
onsemi
IRF510
Diodes Incorporated
ZVN2106GTA
Vishay Siliconix
IRLR120PBF
Wolfspeed, Inc.
E3M0120090J
Alpha & Omega Semiconductor Inc.
AOL1454
Renesas Electronics America Inc
RJK03M7DPA-00#J5A
Nexperia USA Inc.
BSP126,135
onsemi