IXTY1N80P
IXYS
IXYS
MOSFET N-CH 800V 1A TO252
$2.41
Available to order
Reference Price (USD)
70+
$1.57500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXTY1N80P by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXTY1N80P ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
IXYS
IXFY26N30X3
Diodes Incorporated
DMN10H170SVTQ-7
Taiwan Semiconductor Corporation
TSM052NB03CR RLG
Vishay Siliconix
SUG80050E-GE3
Nexperia USA Inc.
PMPB14XNX
onsemi
FQT2P25TF
onsemi
FDMC8010DC
Diodes Incorporated
DMN2011UFDE-13
Panjit International Inc.
PJD85N03_L2_00001
onsemi