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IXTY4N65X2-TRL

IXYS
IXTY4N65X2-TRL Preview
IXYS
MOSFET N-CH 650V 4A TO252
$1.25
Available to order
Reference Price (USD)
1+
$1.25235
500+
$1.2398265
1000+
$1.227303
1500+
$1.2147795
2000+
$1.202256
2500+
$1.1897325
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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