IXXH80N65B4H1
IXYS
IXYS
IGBT 650V 160A 625W TO247AD
$13.96
Available to order
Reference Price (USD)
1+
$9.19000
10+
$8.26900
30+
$7.53367
120+
$6.79875
270+
$6.24752
510+
$5.69625
1,020+
$4.96125
Exquisite packaging
Discount
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Choose IXXH80N65B4H1 Single IGBTs by IXYS for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. IXYS's reputation for quality makes IXXH80N65B4H1 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 160 A
- Current - Collector Pulsed (Icm): 430 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
- Power - Max: 625 W
- Switching Energy: 3.77mJ (on), 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 38ns/120ns
- Test Condition: 400V, 80A, 3Ohm, 15V
- Reverse Recovery Time (trr): 150 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
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