IXXN110N65C4H1
IXYS
IXYS
IGBT MOD 650V 210A 750W SOT227B
$30.99
Available to order
Reference Price (USD)
1+
$23.90000
10+
$22.10600
30+
$20.31333
100+
$18.87940
250+
$17.32604
500+
$16.48962
Exquisite packaging
Discount
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IXYS's IXXN110N65C4H1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust IXYS for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 210 A
- Power - Max: 750 W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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