IXYP10N65C3D1
IXYS
IXYS
IGBT 650V 30A 160W TO-220
$2.56
Available to order
Reference Price (USD)
50+
$2.57260
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXYP10N65C3D1 Single IGBT by IXYS sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with IXYS for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 54 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: 160 W
- Switching Energy: 240µJ (on), 110µJ (off)
- Input Type: Standard
- Gate Charge: 18 nC
- Td (on/off) @ 25°C: 20ns/77ns
- Test Condition: 400V, 10A, 50Ohm, 15V
- Reverse Recovery Time (trr): 170 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
Rohm Semiconductor
RGT16TM65DGC9
Rohm Semiconductor
RGS50TSX2GC11
Renesas Electronics America Inc
RJH6075DPM-N0#T0
Infineon Technologies
IRGB4715DPBF
IXYS
IXBK55N300
onsemi
ISL9V3040D3ST
onsemi
FGL40N120ANDTU
STMicroelectronics
STGWA60V60DF
Renesas Electronics America Inc
CY25AAJ-8F-T13#F10
Microchip Technology