IXYP10N65C3D1M
IXYS
IXYS
IGBT
$2.09
Available to order
Reference Price (USD)
50+
$2.10000
Exquisite packaging
Discount
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The IXYP10N65C3D1M Single IGBT from IXYS redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. IXYS stands behind every IXYP10N65C3D1M with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 50 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
- Power - Max: 53 W
- Switching Energy: 240µJ (on), 170µJ (off)
- Input Type: Standard
- Gate Charge: 18 nC
- Td (on/off) @ 25°C: 20ns/77ns
- Test Condition: 400V, 10A, 50Ohm, 15V
- Reverse Recovery Time (trr): 26 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: TO-220 Isolated Tab
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