J108,126
NXP USA Inc.
NXP USA Inc.
JFET N-CH 25V 0.4W SOT54
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Engineers trust NXP USA Inc.'s J108,126 JFET transistors for critical amplification stages requiring exceptional dynamic range. The proprietary fabrication process delivers tight IDSS matching between units, simplifying parallel configurations in mixer consoles and transducer interfaces. With TO-92 and SMD packaging options available, these components adapt to space-constrained PCB layouts. Visit our product page for application notes or contact sales to discuss volume discounts on these industry-standard semiconductors.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 5 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
- Resistance - RDS(On): 8 Ohms
- Power - Max: 400 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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