J111RL1G
onsemi
onsemi
JFET N-CH 35V 0.35W TO92
$0.12
Available to order
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$0.12000
500+
$0.1188
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$0.1176
1500+
$0.1164
2000+
$0.1152
2500+
$0.114
Exquisite packaging
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Achieve new performance benchmarks with onsemi's J111RL1G JFET transistors, specifically engineered for phase-sensitive detection circuits. The unique triple-diffused structure minimizes 1/f noise while delivering 0.1dB gain flatness across bandwidths to 100MHz. Medical imaging systems and lock-in amplifiers benefit from these precision characteristics. Check stock availability through our real-time inventory system or ask about custom testing protocols for mission-critical deployments.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 30 Ohms
- Power - Max: 350 mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-92 (TO-226)
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