J112_D11Z
onsemi
onsemi
JFET N-CH 35V 625MW TO92
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The J112_D11Z from onsemi sets new standards in JFET reproducibility, with batch-to-batch VGS(off) variations under 2% for automated production lines. These transistors feature laser-trimmed geometries ensuring identical transfer characteristics in matched pairs for differential amplifiers. Industrial automation and process control systems benefit from this exceptional consistency. Join our preferred partner program for dedicated technical support and early access to new JFET developments.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 50 Ohms
- Power - Max: 625 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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