Shopping cart

Subtotal: $0.00

JANS1N5809

Microchip Technology
JANS1N5809 Preview
Microchip Technology
DIODE GEN PURP 100V 3A AXIAL
$47.18
Available to order
Reference Price (USD)
1+
$53.47000
10+
$50.32000
100+
$44.97350
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

Panjit International Inc.

PG154_R2_00001

Vishay General Semiconductor - Diodes Division

SF4007-TR

STMicroelectronics

STPSC8H065G-TR

Vishay General Semiconductor - Diodes Division

US1K-E3/61T

Comchip Technology

CDBUR0520

Vishay General Semiconductor - Diodes Division

BAT54WS-G3-18

Microchip Technology

UES1103SM/TR

Microchip Technology

JANTX1N5420US/TR

Global Power Technology-GPT

G5S12008A

Top