KSD2012GTU
onsemi
onsemi
TRANS NPN 60V 3A TO220F-3
$1.43
Available to order
Reference Price (USD)
1+
$0.95000
10+
$0.83500
100+
$0.64020
500+
$0.50610
1,000+
$0.40488
Exquisite packaging
Discount
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Optimize your designs with KSD2012GTU by onsemi, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, KSD2012GTU is the perfect fit. Contact us today to learn more and place your order with onsemi.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
- Power - Max: 25 W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-3
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