LND250K1-G
Microchip Technology
Microchip Technology
MOSFET N-CH 500V 13MA SOT23
$0.55
Available to order
Reference Price (USD)
3,000+
$0.28840
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance LND250K1-G from Microchip Technology, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, LND250K1-G delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 13mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23 (TO-236AB)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Panjit International Inc.
PJMF280N60E1_T0_00001
onsemi
NTMFS5C410NLT3G
Nexperia USA Inc.
PSMN012-60MSX
Infineon Technologies
SPP35N10
Infineon Technologies
IRF1010NSTRLPBF
Nexperia USA Inc.
BUK7608-55A,118
Vishay Siliconix
SIR664DP-T1-GE3
STMicroelectronics
STD16N60M6
onsemi
HUF75329D3ST
Infineon Technologies