LSIC1MO120E0160
Littelfuse Inc.
Littelfuse Inc.
SICFET N-CH 1200V 22A TO247-3
$12.18
Available to order
Reference Price (USD)
1+
$11.00000
10+
$10.00000
25+
$9.25000
100+
$8.50000
450+
$7.75000
900+
$7.00000
Exquisite packaging
Discount
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Boost your electronic applications with LSIC1MO120E0160, a reliable Transistors - FETs, MOSFETs - Single by Littelfuse Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, LSIC1MO120E0160 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-247-3
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