MBR12020CT
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 20V 120A 2TOWER
$68.85
Available to order
Reference Price (USD)
25+
$65.65840
Exquisite packaging
Discount
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Experience unparalleled performance with the MBR12020CT from GeneSiC Semiconductor, a key player in the Diodes - Rectifiers - Arrays segment of Discrete Semiconductor Products. These diodes are engineered for precision and durability, offering features such as fast recovery time and high current density. The MBR12020CT is perfect for applications requiring reliable rectification and array configurations. GeneSiC Semiconductor ensures every product meets stringent quality controls. Contact us today to request a sample or to discuss bulk purchase options!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io) (per Diode): 120A (DC)
- Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3 mA @ 20 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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