MBR40035CT
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 35V 200A 2TOWER
$98.82
Available to order
Reference Price (USD)
25+
$78.26560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unparalleled performance with the MBR40035CT from GeneSiC Semiconductor, a key player in the Diodes - Rectifiers - Arrays segment of Discrete Semiconductor Products. These diodes are engineered for precision and durability, offering features such as fast recovery time and high current density. The MBR40035CT is perfect for applications requiring reliable rectification and array configurations. GeneSiC Semiconductor ensures every product meets stringent quality controls. Contact us today to request a sample or to discuss bulk purchase options!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35 V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 35 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
Related Products
Vishay General Semiconductor - Diodes Division
VS-VSKC196/08PBF
SMC Diode Solutions
80CNQ035
Taiwan Semiconductor Corporation
TSD30H100CW
IXYS
MEE95-06DA
Vishay General Semiconductor - Diodes Division
UGB10GCT-E3/45
Rohm Semiconductor
RB228NS150TL
Taiwan Semiconductor Corporation
BAT54C RFG
Microchip Technology
APT60D40LCTG
Microchip Technology
APT15D100BCTG
IXYS