MBR600200CT
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE SCHOTTKY 200V 300A 2 TOWER
$129.36
Available to order
Reference Price (USD)
25+
$127.94160
Exquisite packaging
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Optimize your electronic systems with the MBR600200CT from GeneSiC Semiconductor, a leading product in the Diodes - Rectifiers - Arrays category of Discrete Semiconductor Products. These diodes provide exceptional rectification and array performance, backed by advanced technology and rigorous testing. The MBR600200CT is known for its high efficiency, low power dissipation, and long service life. GeneSiC Semiconductor guarantees quality and reliability in every component. Contact us today to learn more and place your order!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3 mA @ 200 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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