MBT35200MT1G
onsemi
onsemi
TRANS PNP 35V 2A 6TSOP
$0.48
Available to order
Reference Price (USD)
3,000+
$0.16275
6,000+
$0.15225
15,000+
$0.14175
30,000+
$0.14000
Exquisite packaging
Discount
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Boost your electronic applications with MBT35200MT1G from onsemi, a premier provider of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single feature low saturation voltage and high efficiency, making them ideal for energy-sensitive projects. Suitable for both commercial and industrial uses, MBT35200MT1G guarantees performance and longevity. Interested? Send us an inquiry and let onsemi support your next project.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 35 V
- Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
- Power - Max: 625 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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