MC1413DR2G
onsemi
onsemi
TRANS 7NPN DARL 50V 0.5A 16SOIC
$0.64
Available to order
Reference Price (USD)
1+
$0.64000
500+
$0.6336
1000+
$0.6272
1500+
$0.6208
2000+
$0.6144
2500+
$0.608
Exquisite packaging
Discount
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The MC1413DR2G Bipolar Junction Transistor Arrays from onsemi are built for high-efficiency and long-lasting operation. Key benefits include matched transistor pairs, low distortion, and wide operating temperature range, ideal for RF and power amplification. Commonly found in broadcasting equipment, instrumentation, and security systems. Interested in learning more? Submit an inquiry and our experts will guide you through the selection process!
Specifications
- Product Status: Active
- Transistor Type: 7 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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