MDI100-12A3
IXYS
IXYS
IGBT MODULE 1200V 135A 560W Y4M5
$59.67
Available to order
Reference Price (USD)
6+
$53.63500
Exquisite packaging
Discount
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IXYS's MDI100-12A3 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust IXYS for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 135 A
- Power - Max: 560 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M5
- Supplier Device Package: Y4-M5
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