MII150-12A4
IXYS
IXYS
IGBT MOD 1200V 180A 760W Y3DCB
$138.57
Available to order
Reference Price (USD)
2+
$108.40000
Exquisite packaging
Discount
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IXYS's MII150-12A4 IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 180 A
- Power - Max: 760 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
- Current - Collector Cutoff (Max): 7.5 mA
- Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y3-DCB
- Supplier Device Package: Y3-DCB
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