MJ10012
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 400V 10A TO3
$7.92
Available to order
Reference Price (USD)
1+
$7.92000
500+
$7.8408
1000+
$7.7616
1500+
$7.6824
2000+
$7.6032
2500+
$7.524
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with MJ10012 by NTE Electronics, Inc, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, MJ10012 is the perfect fit. Contact us today to learn more and place your order with NTE Electronics, Inc.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 3A, 6V
- Power - Max: 175 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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