MJD117T4G
onsemi
onsemi
TRANS PNP DARL 100V 2A DPAK
$0.85
Available to order
Reference Price (USD)
2,500+
$0.25864
5,000+
$0.24180
12,500+
$0.23900
Exquisite packaging
Discount
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Choose MJD117T4G by onsemi for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, MJD117T4G is a versatile solution. Ready to order? Submit your inquiry today and let onsemi provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
- Current - Collector Cutoff (Max): 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
- Power - Max: 1.75 W
- Frequency - Transition: 25MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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