MJD122-1G
onsemi
onsemi
TRANS NPN DARL 100V 8A DPAK
$0.44
Available to order
Reference Price (USD)
1+
$0.43715
500+
$0.4327785
1000+
$0.428407
1500+
$0.4240355
2000+
$0.419664
2500+
$0.4152925
Exquisite packaging
Discount
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Optimize your designs with MJD122-1G by onsemi, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, MJD122-1G is the perfect fit. Contact us today to learn more and place your order with onsemi.
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
- Power - Max: 1.75 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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