MJE13006
NTE Electronics, Inc

NTE Electronics, Inc
TRANS NPN 300V 8A TO220
$1.60
Available to order
Reference Price (USD)
1+
$1.60000
500+
$1.584
1000+
$1.568
1500+
$1.552
2000+
$1.536
2500+
$1.52
Exquisite packaging
Discount
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Optimize your designs with MJE13006 by NTE Electronics, Inc, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, MJE13006 is the perfect fit. Contact us today to learn more and place your order with NTE Electronics, Inc.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
- Power - Max: 80 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220