MJE3055TG
onsemi
onsemi
TRANS NPN 60V 10A TO220
$0.94
Available to order
Reference Price (USD)
1+
$0.97000
50+
$0.80720
100+
$0.66270
500+
$0.52846
1,000+
$0.42710
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with MJE3055TG by onsemi, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, MJE3055TG is the perfect fit. Contact us today to learn more and place your order with onsemi.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Power - Max: 75 W
- Frequency - Transition: 2MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
Rohm Semiconductor
2SD2096T114E
onsemi
MBT3906DW1T3
Solid State Inc.
MJ10006
Infineon Technologies
BCX70HE6327
Toshiba Semiconductor and Storage
2SA2154MFVGR,L3F
NXP USA Inc.
PBSS3515E,115
onsemi
BSP52T1G
onsemi
2SA1020RLRAG
Diodes Incorporated
MMSTA64-7-F
NXP Semiconductors