MJE3439G
onsemi
onsemi
TRANS NPN 350V 0.3A TO126
$0.70
Available to order
Reference Price (USD)
1+
$0.66000
10+
$0.56600
100+
$0.42540
500+
$0.33696
1,000+
$0.26325
Exquisite packaging
Discount
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Experience superior performance with MJE3439G from onsemi, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, MJE3439G is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
- Current - Collector Cutoff (Max): 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 10V
- Power - Max: 15 W
- Frequency - Transition: 15MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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