MMBFJ111
onsemi

onsemi
JFET N-CH 35V 350MW SOT23-3
$0.45
Available to order
Reference Price (USD)
3,000+
$0.11090
6,000+
$0.10418
15,000+
$0.09745
30,000+
$0.08939
75,000+
$0.08603
Exquisite packaging
Discount
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Optimize your BOM with onsemi's MMBFJ111 JFET transistors the cost-effective solution without compromising on specifications. These general-purpose devices deliver 5nV/ Hz noise density at 1kHz, suitable for consumer audio and IoT sensor nodes. With RoHS-compliant packages and MSL-1 rating, they simplify manufacturing compliance. Subscribe to our newsletter for JFET application spotlights or contact regional sales for local stockists carrying this versatile product line.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 30 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3