MMBFJ177LT1G
onsemi
onsemi
JFET P-CH 30V 0.225W SOT23-3
$0.47
Available to order
Reference Price (USD)
3,000+
$0.14859
6,000+
$0.14001
15,000+
$0.13143
30,000+
$0.12113
75,000+
$0.11684
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve new performance benchmarks with onsemi's MMBFJ177LT1G JFET transistors, specifically engineered for phase-sensitive detection circuits. The unique triple-diffused structure minimizes 1/f noise while delivering 0.1dB gain flatness across bandwidths to 100MHz. Medical imaging systems and lock-in amplifiers benefit from these precision characteristics. Check stock availability through our real-time inventory system or ask about custom testing protocols for mission-critical deployments.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
- Resistance - RDS(On): 300 Ohms
- Power - Max: 225 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
Related Products
Linear Integrated Systems, Inc.
177DFN 8L
Linear Integrated Systems, Inc.
LS845 TO-71 6L
Fairchild Semiconductor
2N5639
Linear Integrated Systems, Inc.
LSJ74D TO-92 3L
Linear Integrated Systems, Inc.
U404 TO-71 6L
Linear Integrated Systems, Inc.
LS5912 TO-78 6L
Linear Integrated Systems, Inc.
LS26VNS DFN 8L
Fairchild Semiconductor
J106
Texas Instruments
JFE2140DR
NTE Electronics, Inc