MMBT5551LT3G
onsemi
onsemi
TRANS NPN 160V 0.6A SOT23-3
$0.21
Available to order
Reference Price (USD)
10,000+
$0.03022
30,000+
$0.02732
50,000+
$0.02443
100,000+
$0.02298
250,000+
$0.02056
Exquisite packaging
Discount
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Boost your electronic applications with MMBT5551LT3G from onsemi, a premier provider of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single feature low saturation voltage and high efficiency, making them ideal for energy-sensitive projects. Suitable for both commercial and industrial uses, MMBT5551LT3G guarantees performance and longevity. Interested? Send us an inquiry and let onsemi support your next project.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 225 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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