MMBT5551M3T5G
onsemi
onsemi
TRANS NPN 160V 0.06A SOT723
$0.21
Available to order
Reference Price (USD)
8,000+
$0.04139
16,000+
$0.03544
24,000+
$0.03345
56,000+
$0.03147
200,000+
$0.02816
Exquisite packaging
Discount
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Optimize your designs with MMBT5551M3T5G by onsemi, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, MMBT5551M3T5G is the perfect fit. Contact us today to learn more and place your order with onsemi.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 60 mA
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 265 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SOT-723
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