MMBT5551Q-7
Diodes Incorporated
Diodes Incorporated
SS HI VOLTAGE TRANSISTOR SOT23 T
$0.07
Available to order
Reference Price (USD)
1+
$0.06636
500+
$0.0656964
1000+
$0.0650328
1500+
$0.0643692
2000+
$0.0637056
2500+
$0.063042
Exquisite packaging
Discount
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Discover high-quality MMBT5551Q-7 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - Bipolar (BJT) - Single are designed for reliability and performance, making them ideal for various electronic applications. These transistors feature excellent amplification and switching capabilities, ensuring optimal performance in your circuits. Perfect for use in amplifiers, switches, and other electronic devices, MMBT5551Q-7 delivers consistent results. Interested in learning more? Contact us today for a quote and let Diodes Incorporated meet your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 300 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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