MMBTH10-7-F
Diodes Incorporated
Diodes Incorporated
RF TRANS NPN 25V 650MHZ SOT23-3
$0.26
Available to order
Reference Price (USD)
3,000+
$0.05000
6,000+
$0.04400
15,000+
$0.03800
30,000+
$0.03600
75,000+
$0.03400
150,000+
$0.03000
Exquisite packaging
Discount
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Diodes Incorporated's MMBTH10-7-F RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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