MMBTH10LT1G
onsemi
onsemi
RF TRANS NPN 25V 650MHZ SOT23-3
$0.28
Available to order
Reference Price (USD)
3,000+
$0.04135
6,000+
$0.03616
15,000+
$0.03097
30,000+
$0.02924
75,000+
$0.02751
150,000+
$0.02405
Exquisite packaging
Discount
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Upgrade your RF designs with onsemi's MMBTH10LT1G Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how MMBTH10LT1G can enhance your projects!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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