MMDT2222V-7
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN 40V 0.6A SOT563
$0.45
Available to order
Reference Price (USD)
3,000+
$0.10450
6,000+
$0.09925
15,000+
$0.09138
30,000+
$0.08613
75,000+
$0.08000
Exquisite packaging
Discount
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Achieve peak performance with Diodes Incorporated's MMDT2222V-7 BJT Arrays, crafted for precision and durability. These arrays feature high-speed operation, low thermal resistance, and excellent matching properties, ensuring consistent results in critical applications. Commonly utilized in data acquisition, telecommunications, and energy management systems. Contact us today to discuss your project requirements and discover how we can help you succeed!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 150mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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