MMDT2227M-7
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 40V/60V 0.6A SOT26
$0.48
Available to order
Reference Price (USD)
3,000+
$0.08400
6,000+
$0.07560
15,000+
$0.06720
30,000+
$0.06300
75,000+
$0.05600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with the MMDT2227M-7 Transistor Arrays by Diodes Incorporated, providing superior electrical characteristics and reliability. Features include low on-resistance, high current gain, and ESD protection, perfect for sensitive and high-power applications. Ideal for use in medical devices, power converters, and consumer gadgets. Let s collaborate send us your specifications and we ll deliver the perfect solution for your needs!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V, 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 300mW
- Frequency - Transition: 300MHz, 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
Related Products
Microchip Technology
JANS2N3810L
Sanken
STA434A
Fairchild Semiconductor
BC857CMTF
onsemi
EMZ1DXV6T1G
Rohm Semiconductor
QSX8TR
onsemi
MMPQ2222A
Toshiba Semiconductor and Storage
HN1C03F-B(TE85L,F)
Rohm Semiconductor
UMT1NFHATN
Nexperia USA Inc.
PBSS4112PAN,115
Sanken