MMDT5551-7-F
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN 160V 0.2A SOT363
$0.46
Available to order
Reference Price (USD)
3,000+
$0.09200
6,000+
$0.08360
15,000+
$0.07520
30,000+
$0.07100
75,000+
$0.06400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance MMDT5551-7-F Bipolar Junction Transistor Arrays from Diodes Incorporated, designed for reliable and efficient circuit applications. These transistor arrays feature excellent current handling, low saturation voltage, and high-speed switching capabilities, making them ideal for amplification and switching tasks. Perfect for use in industrial automation, consumer electronics, and communication devices. Contact us today for a quote and let our experts assist you with your specific requirements!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Nexperia USA Inc.
PBSS4260PANPSX
Micro Commercial Co
MMDT5401-TP
onsemi
NSVT65011MW6T1G
Rohm Semiconductor
UMT1NTN
Microchip Technology
JANS2N6989U/TR
Diodes Incorporated
MMDT5401Q-7-F
Central Semiconductor Corp
CMLT5087EM TR PBFREE
Panjit International Inc.
MMDT4413_R1_00001
Nexperia USA Inc.
BC846BS,135
Solid State Inc.