MMIX1F360N15T2
IXYS
IXYS
MOSFET N-CH 150V 235A 24SMPD
$45.83
Available to order
Reference Price (USD)
20+
$33.17050
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
MMIX1F360N15T2 by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, MMIX1F360N15T2 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 680W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 24-SMPD
- Package / Case: 24-PowerSMD, 21 Leads
Related Products
Infineon Technologies
IRFR5505TRLPBF
Diodes Incorporated
BS870Q-7-F
onsemi
NVTFS6H850NWFTAG
Infineon Technologies
IPB60R045P7ATMA1
Fairchild Semiconductor
FDD6030BL
Toshiba Semiconductor and Storage
TW015N120C,S1F
IXYS
IXTP6N100D2
Torex Semiconductor Ltd
XP162A12A6PR-G
STMicroelectronics
STF28NM60ND
Microchip Technology