MMRF1305HR5
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 133V 512MHZ NI-780-4
$113.94
Available to order
Reference Price (USD)
50+
$74.05820
100+
$68.87940
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, NXP USA Inc.'s MMRF1305HR5 RF MOSFETs offer best-in-class power density and thermal resistance. Ideal for amateur radio and test instrumentation, these transistors minimize signal loss while maximizing output. Backed by rigorous quality testing. Start your procurement process inquire today about bulk order discounts!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 512MHz
- Gain: 26dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 100W
- Voltage - Rated: 133 V
- Package / Case: NI-780-4
- Supplier Device Package: NI-780-4
Related Products
WAVEPIA.,Co.Ltd
WP2806008UH
Microwave Technology Inc.
MWT-773
MACOM Technology Solutions
MRF275L
Ampleon USA Inc.
B10G3741N55DZ
Wolfspeed, Inc.
CG2H30070F
NXP USA Inc.
BLF6G27-75,112
onsemi
2SK3491-TL-E
Wolfspeed, Inc.
PTRA082808NF-V1-R5
NXP USA Inc.
MRFE6VP6300GSR5
STMicroelectronics