MMUN2211LT1G
onsemi
onsemi
TRANS PREBIAS NPN 50V SOT23-3
$0.15
Available to order
Reference Price (USD)
1+
$0.15000
500+
$0.1485
1000+
$0.147
1500+
$0.1455
2000+
$0.144
2500+
$0.1425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MMUN2211LT1G by onsemi is a premier choice in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for precision and efficiency, featuring high gain bandwidth, low distortion, and excellent thermal management. Perfect for RF applications, sensor interfaces, and control systems. onsemi stands for quality and innovation. Reach out to us for expert advice and competitive pricing!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 246 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
Related Products
Micro Commercial Co
DTA123YCA-TP
Rohm Semiconductor
DTA015EEBTL
onsemi
MUN2136T1G
Toshiba Semiconductor and Storage
RN1314(TE85L,F)
Panasonic Electronic Components
UNR32A1G0L
Nexperia USA Inc.
PDTC114ET,215
Toshiba Semiconductor and Storage
RN1106,LXHF(CT
Diotec Semiconductor
MMBTRC119SS
Rohm Semiconductor
DTA124EU3T106
Rohm Semiconductor