MNS2N3810UP
Microchip Technology
Microchip Technology
DUAL SMALL-SIGNAL BJT
$51.16
Available to order
Reference Price (USD)
1+
$51.16500
500+
$50.65335
1000+
$50.1417
1500+
$49.63005
2000+
$49.1184
2500+
$48.60675
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience cutting-edge technology with the MNS2N3810UP Transistor Arrays by Microchip Technology, designed to meet the highest industry standards. Features include enhanced switching speed, low leakage current, and superior thermal management. Perfect for applications in aerospace, defense, and renewable energy systems. Have questions or need a customized solution? Contact us now and let s discuss how we can support your needs!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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