MRF559G
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 16V 870MHZ MICRO X
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Designed for the future, Microsemi Corporation's MRF559G RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: 870MHz
- Noise Figure (dB Typ @ f): -
- Gain: 9.5dB
- Power - Max: 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Micro-X ceramic (84C)
- Supplier Device Package: Micro-X ceramic (84C)
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