MRF581
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 18V 5GHZ MICRO X
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Boost your RF circuitry with MRF581, Microsemi Corporation's premium BJT transistors tailored for high-speed switching. Key advantages include minimal intermodulation distortion and extended operational life. Widely adopted in 5G infrastructure and aerospace tech. Have questions? Send your inquiry we re here to optimize your procurement process!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Micro-X ceramic (84C)
- Supplier Device Package: Micro-X ceramic (84C)
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