MRF5812G
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 15V 5GHZ 8SO
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF designs with Microsemi Corporation's MRF5812G Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how MRF5812G can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
Related Products
CEL
NE68130-T1-A
onsemi
MPSH81_D26Z
Microsemi Corporation
MRF8372GR2
CEL
NE97733-T1B-A
onsemi
PN5179_D26Z
Fairchild Semiconductor
MPS5179
Broadcom Limited
AT-42035G
CEL
NE97733-A
onsemi
BF199_J35Z
NXP USA Inc.