MRF586G
Microsemi Corporation

Microsemi Corporation
RF TRANS NPN 17V 3GHZ TO39
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Microsemi Corporation presents MRF586G: The go-to RF BJT transistor for low-power, high-frequency designs. Its standout features like controlled beta variation and hermetic packaging make it a favorite among telecom engineers. From RFID readers to test equipment, versatility meets precision. Get started request samples or datasheets via our quick-response form!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 17V
- Frequency - Transition: 3GHz
- Noise Figure (dB Typ @ f): -
- Gain: 13.5dB
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39