MRFE6VP5150GNR1,528
NXP USA Inc.
NXP USA Inc.
WIDEBAND RF POWER LDMOS TRANSIST
$32.69
Available to order
Reference Price (USD)
1+
$32.69000
500+
$32.3631
1000+
$32.0362
1500+
$31.7093
2000+
$31.3824
2500+
$31.0555
Exquisite packaging
Discount
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The MRFE6VP5150GNR1,528 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 1.8MHz ~ 600MHz
- Gain: 26.1dB
- Voltage - Test: 50 V
- Current Rating (Amps): 5µA
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 150W
- Voltage - Rated: 133 V
- Package / Case: TO-270BB
- Supplier Device Package: TO-270 WB-4 Gull
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