MRFE6VP8600HR5
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI-1230
$298.17
Available to order
Reference Price (USD)
1+
$298.17000
500+
$295.1883
1000+
$292.2066
1500+
$289.2249
2000+
$286.2432
2500+
$283.2615
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet NXP USA Inc.'s MRFE6VP8600HR5, a game-changing RF MOSFET tailored for cutting-edge wireless technologies. Featuring advanced packaging for reduced parasitic effects and enhanced thermal management, these transistors are vital for 5G base stations and satellite systems. Trusted by engineers worldwide for consistent performance. Have questions? Reach out now for expert guidance!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 860MHz
- Gain: 19.3dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 125W
- Voltage - Rated: 130 V
- Package / Case: NI-1230
- Supplier Device Package: NI-1230
Related Products
onsemi
MCH6408-TL-E
Toshiba Semiconductor and Storage
3SK293(TE85L,F)
Ampleon USA Inc.
CLF1G0035S-200PU
Ampleon USA Inc.
BLF178XRS,112
Ampleon USA Inc.
BLF8G27LS-150VU
NXP USA Inc.
MRFG35003N6AT1
Wolfspeed, Inc.
CG2H40120F
MACOM Technology Solutions
NPT35015D
NXP USA Inc.
AFV141KHR5
Wolfspeed, Inc.