MRFE6VS25NR1
NXP USA Inc.
NXP USA Inc.
FET RF 133V 512MHZ TO270-2
$36.63
Available to order
Reference Price (USD)
500+
$20.05830
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance MRFE6VS25NR1 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 512MHz
- Gain: 25.4dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 10 mA
- Power - Output: 25W
- Voltage - Rated: 133 V
- Package / Case: TO-270AA
- Supplier Device Package: TO-270-2
Related Products
NXP USA Inc.
MRF6VP2600HR5
Freescale Semiconductor
MRF8S9202NR3
Tagore Technology
TA9110K
STMicroelectronics
PD55003L-E
Microchip Technology
ARF1500
Integra Technologies Inc.
IGT2731M130
onsemi
2SJ266-DL-E
STMicroelectronics
SD4931
NXP USA Inc.
MMRF1312GSR5
Wolfspeed, Inc.