MS1001
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 18V 30MHZ M174
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Discover high-performance MS1001 RF Bipolar Transistors from Microsemi Corporation, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 30MHz
- Noise Figure (dB Typ @ f): -
- Gain: 13dB
- Power - Max: 270W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
- Current - Collector (Ic) (Max): 20A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M174
- Supplier Device Package: M174