MS1202
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 35V 136MHZ M135
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Designed for the future, Microsemi Corporation's MS1202 RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 35V
- Frequency - Transition: 118MHz ~ 136MHz
- Noise Figure (dB Typ @ f): -
- Gain: 8.4dB
- Power - Max: 15W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
- Current - Collector (Ic) (Max): 1A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M135
- Supplier Device Package: M135
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